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2008-Oct-16 Academia Sinica E-news No.88
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TIGP Distinguished Lecture Series
Title: How Nurture Could Influence Nature-- Epigenetics as An Additional Dimension Evolution Speaker: Prof. David Baulcombe Time: 2:00 pm, October 23, 2008 (Thursday) Venue: 1st Conference Room, 2F, Center of Academic Activities, Academia Sinica Moderator: Vice President Andrew H.-J. Wang
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Nobel Lecture
Topic: Turning Pages: From Gels to Genes Speaker: Prof. Oliver Smithies (The Nobel Prize Laureate in Physiology or Medicine 2007) Time: 9:00 am-12:00 pm, October 17, 2008 (Friday) Venue: B1C Lecture Room, Institute of Biomedical Sciences, Academia Sinica
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IMB Special Seminar
Topic: Killer T Cells and Immunodominance Hierarchies Speaker: Dr. Peter C. Doherty (1996 Nobel Laureate; U. Melbourne of Australia & St. Jude Children's Hospital, USA) Moderator: Dr. Ming-Zong Lai Time: 10:30 am, October 20, 2008 (Monday) Venue: Auditorium, B1F, Institute of Molecular Biology, Academia Sinica
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2008 The Distinguished Lecture Series of Academia Sinica
Speaker: Prof. David Baulcombe Lecture I Time: 10:00-11:30 am, October 22, 2008 (Wednesday) Venue: International Conference Hall, Building for Humanities and Social Sciences, Academia Sinica
Lecture II Time: 2:30-4:00 pm, October 23, 2008 (Thursday) Venue: 1st Conference Room, Center of Academic Activities, Academia Sinica Lecture III Time: 3:10-4:40 pm, October 24, 2008 (Friday) Venue: Lecture Theatre, 1F, Food Science and Biotechnology Building, National Chung Hsing University
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Quantum-Dot/Quantum-Well Mixed-Mode Infrared Photodetectors
Assistant Research Fellow Shih-Yen Lin
and Postdoctoral Research Fellow Shu-Ting Chou (Research Center for
Applied Sciences)
GaAs/AlGaAs
quantum-well infrared photodetectors (QWIPs) have attracted intensive attention
since 1980s. Due to the possible bandgap engineering for the GaAs/AlGaAs
materials, various kinds of GaAs/AlGaAs QWIPs have been developed. The detection
wavelengths of the QWIPs could extend from 6 to 25 mm.
Single-color, multi-color and voltage-tunable multi-color QWIPs have been
successfully developed. Due to that GaAs and AlGaAs materials are
lattice-matched, high-quality epi-wafers could be obtained either by molecular
beam epitaxy (MBE) or metal-organic chemical vapor-phase deposition (MOCVD)
techniques.
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